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2SK1669
Silicon N-Channel MOS FET
November 1996 Application
High speed power switching
Features
* * * * * Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 90 ns) Suitable for motor control, switching regulator and DC - DC converter
Outline
TO-3P
D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source
S
2SK1669
Absolute Maximum Ratings (Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW 10 s, duty cycle 1% 2. Value at TC = 25C Symbol VDSS VGSS ID ID(pulse)* IDR Pch* Tch Tstg
2 1
Ratings 250 30 30 120 30 125 150 -55 to +150
Unit V V A A A W C C
2
2SK1669
Electrical Characteristics (Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS IGSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 250 30 -- -- 2.0 -- 12 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.075 20 3100 1330 190 45 170 270 150 1.0 90 Max -- -- 10 250 3.0 0.095 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns IF = 30 A, VGS = 0 IF = 30 A, VGS = 0, diF/dt = 100 A/s ID = 15 A, VGS = 10 V, RL = 2 Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 200 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 15 A, VGS = 10 V * ID = 15 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz
1
Zero gate voltage drain current IDSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse test
1
3
2SK1669
Power vs. Temperature Derating 150
Maximum Safe Operation Area 1,000 300
Drain Current ID (A)
a re sa ) thi S (on in D on y R ati b er ited Op lim PW is
Channel Dissipation Pch (W)
100 30 10 3 1 0.3 0.1
10
100
DC
=
1
10 ms
ms
(1
10 s 0 s
Op
er
ati
on
50
(T
Sh
C
=
ot)
25
C
)
Ta = 25C 1 10 3 30 100 300 1,000 Drain to Source Voltage VDS (V)
0
50 100 Case Temperature TC (C)
150
Typical Output Characteristics 50 10 V 40 8V 6V 5V 30 4.5 V
Drain Current ID (A)
Typical Transfer Characteristics 50 VDS = 10 V Pulse Test
Pulse Test
40
Drain Current ID (A)
30
20
20
10
VGS = 4 V
10
TC = 75C
25C -25C
0
8 4 12 16 Drain to Source Voltage VDS (V)
20
0
4 2 6 8 Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance vs. Drain Current
10
Drain to Source Saturation Voltage VDS (on) (V)
5 Pulse Test 4
Static Drain to Source on State Resistance RDS (on) ()
Drain to Source Saturation Voltage vs. Gate to Source Voltage
0.5
Pulse Test
0.2 0.1 0.05 VGS = 10 V, 15 V
3
2
ID = 20 A 10 A 5A 8 20 4 12 16 Gate to Source Voltage VGS (V)
0.02 0.01
1
0.005 1 2 5 10 20 Drain Current ID (A) 50 100
0
4
2SK1669
Static Drain to Source on State Resistance vs. Temperature
Static Drain to Source on State Resistance RDS (on) ()
Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance yfs (S)
0.2 VGS = 10 V Pulse Test 0.16 ID = 30 A 20 A
50 VDS = 10 V Pulse Test 20 25C 10 5 75C Ta = -25C
0.12 10 A 0.08
2 1 0.5 0.5
0.04
0 -40
40 0 80 120 Case Temperature TC (C)
Body to Drain Diode Reverse Recovery Time
160
1
5 2 10 20 Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
50
500 Reverse Recovery Time trr (ns)
10,000 Ciss
200
Capacitance C (pF)
100 50 di/dt = 100 A/s, VGS = 0 Ta = 25C, Pulse Test
1,000
Coss
20 10 5 0.5
100 Crss VGS = 0 f = 1 MHz 10
10 2 1 5 20 Reverse Drain Current IDR (A)
50
0
20 10 30 40 Drain to Source Voltage VDS (V)
50
Dynamic Input Characteristics 500 Drain to Source Voltage VDS (V) VGS = 50V 100 V 200 V VGS VDS 20 Gate to Source Voltage VGS (V)
Switching Characteristics 500 td (off)
Switching Time t (ns)
400
16
200 tf 100 50 tr td (on)
300
12
200
8
20 10 5 0.5
100
VDD = 200 V 100 V 50 V
ID = 30 A Pulse Test 200
4
. VGS = 10 V, VDD = 30 V . PW = 2 s, duty < 1%
0 0 40 120 160 80 Gate Charge Qg (nc)
1
5 10 20 2 Drain Current ID (A)
50
5
2SK1669
Reverse Drain Current vs. Source to Drain Voltage 50
Reverse Drain Current IDR (A)
Pulse Test 40
30
20 VGS = 10 V 10 0, -5 V
0
0.8 2.0 0.4 1.2 1.6 Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance S (t)
Normalized Transient Thermal Impedance vs. Pulse Width 3 1.0 D=1 0.5 0.3 0.1 0.2 0.1 0.05 0.02 0.03 0.01 10 ch-c (t) = S (t) * ch-c ch-c = 1.0C/W, TC = 25C PDM PW 1 D = PW T TC = 25C
0.01 Pulse hot 1S
100 1m 10 m Pulse Width PW (s) 100 m
T
10
Waveforms
Switching Time Test Circuit Vin Monitor Vout Monitor D.U.T RL 50 Vin 10 V VDD . = 30 V .
Vout Vin 10% 10%
90%
10% 90% td (off) tf
td (on)
90% tr
6
2SK1669
Notice
When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS.
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